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CLUSTERING OF HELIUM ATOMS AT A1/2<111>(110) EDGE DISLOCATION IN ALPHA -IRON.BERG FVD; HEUGTEN WV; CASPERS LM et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 2; PP. 193-196; BIBL. 8 REF.Article

MOESSBAUER EFFECT STUDY OF IRON-IMPLANTED COPPER ALLOYS. II. AS A FUNCTION OF ANNEALING TEMPERATURE.JAIN R; LONGWORTH G.1978; J. PHYS. F; G.B.; DA. 1978; VOL. 8; NO 2; PP. 363-374; BIBL. 12 REF.Article

SOLID SOLUTIONS OF THE HYDROGEN-MAGNESIUM SYSTEM PRODUCED BY IMPLANTATION.CHAMI AC; BUGEAT JP; LIGEON E et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 1-2; PP. 73-81; BIBL. 24 REF.Article

SOLUTE ATOM CLUSTERING DURING AGEING AN ALUMINIUM-MAGNESIUM-SILICON SOLID SOLUTION UNDER STRESS.HIRATA T.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. 201-205; ABS. ALLEM.; BIBL. 15 REF.Article

THE INFLUENCE OF INTERATOMIC POTENTIALS ON THE INTERACTION OF HE WITH A 1/2 <111> (110) EDGE DISLOCATION IN MOLYBDENUMVAN HEUGTEN WFWM; VAN DEN BERG F; CASPERS LM et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 90; NO 2; PP. 643-648; BIBL. 13 REF.Article

THE INTERACTION OF HE WITH C IN ALPHA FEVAN DER KOLK GJ; VAN VEEN A; CASPERS LM et al.1979; DELFT PROGR. REP.; NLD; DA. 1979; VOL. 4; NO 1; PP. 19-28; BIBL. 15 REF.Article

MOESSBAUER EFFECT STUDY OF IRON-IMPLANTED COPPER ALLOYS. I. AS A FUNCTION OF DOSE.LONGWORTH G; JAIN R.1978; J. PHYS. F; G.B.; DA. 1978; VOL. 8; NO 2; PP. 351-362; BIBL. 26 REF.Article

THE KINETICS OF CARBON CLUSTERING IN MARTENSITEDECRISTOFARO N; KAPLOW R; OWEN WS et al.1978; METALLURG. TRANS. A; USA; DA. 1978; VOL. 9; NO 6; PP. 821-825; BIBL. 12 REF.Article

ELECTRON-IMPURITY SCATTERING IN DILUTE ALLOYS WITH LATTICE DISTORTION: II. A MODEL STUDY.LODDER A.1977; J. PHYS. F; G.B.; DA. 1977; VOL. 7; NO 1; PP. 139-151; BIBL. 7 REF.Article

THE THERMAL RE-SOLUTION AND GROWTH OF AGGREGATE STRUCTURES OF DIVALENT MANGANESE THAT OCCUR IN MONOCRYSTALLINE SODIUM CHLORIDE.KIRK DL; KAHN AR; PRATT PL et al.1975; J. PHYS., D; G.B.; DA. 1975; VOL. 8; NO 17; PP. 2013-2024; H.T. 2; BIBL. 9 REF.Article

Self-consistent impurity calculations in the atomic-spheres approximationGUNNARSSON, O; JEPSEN, O; ANDERSEN, O. K et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 12, pp 7144-7168, issn 0163-1829Article

AMAS DE MNGAMMA DANS LES DIAMANTS SYNTHETIQUESBUZIN VI; ALIKHANOV RA; KUZIN NN et al.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 1; PP. 165-168; BIBL. 19 REF.Article

MISE EN EVIDENCE D'UN STADE DE PREPRECIPITATION AU COURS DU VIEILLISSEMENT D'UN ALLIAGE DE TYPE MARAGING FE-19 AT% NI-3 AT% MOCOURRIER R; LE CAER G.1975; C.R. ACAD. SCI., C; FR.; DA. 1975; VOL. 280; NO 10; PP. 637-640; ABS. ANGL.; BIBL. 6 REF.Article

PHENOMENOLOGICAL DESCRIPTION OF AGGREGATES OF EXCHANGE-BONDED PARAMAGNETIC IONS IN CRYSTALLINE ENVIRONMENT. II. MICROSCOPICAL MODEL FOR A RECTANGULAR AGGREGATE OF FOUR PARAMAGNETIC IONS WITH SPIN ONE HALFKURZYNSKI M.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 55; NO 2; PP. 755-772; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

Localisation dans un système de particules interagissant et diffusant dans un cristal régulierKAGAN, YU; MAKSIMOV, L. A.ZETF. Pis′ma v redakciû. 1984, Vol 87, Num 1, pp 348-365, issn 0044-4510Article

AN MTO THEORY FOR THE CALCULATION OF DEEP LEVELS IN SEMICONDUCTORS DUE TO A NONSUBSTITUTIONAL IMPURITY CLUSTERROTTHIER R; SCHEIRE L; PHARISEAU P et al.1981; PHYSICA, A; ISSN 0378-4371; NLD; DA. 1981; VOL. 108; NO 2-3; PP. 622-630; BIBL. 4 REF.Article

DETERMINATION OF THE ORDER OF REACTION OF AN AGGREGATION PROCESS ANALYSING THE CONCENTRATION DEPENDENCE OF THE FRACTIONAL TIMES OF THE REACTING PARTICLESKHAIRETDINOV EF; BERG G.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 2; PP. K169-K172; BIBL. 9 REF.Article

OPTICAL STUDY OF DEFECT CLUSTERING IN NACL: SM2+.SUNDBERG MN; LAUER HV; FONG FK et al.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 62; NO 5; PP. 1853-1860; BIBL. 8 REF.Article

AN MTO THEORY FOR THE CALCULATION OF DEEP LEVELS IN SEMICONDUCTORS DUE TO A SUBSTITUTIONAL IMPURITY CLUSTERROTTHIER R; SCHEIRE L; PHARISEAU et al.1980; PHYSICA A; ISSN 0378-4371; NLD; DA. 1980; VOL. 104; NO 1-2; PP. 233-242; BIBL. 8 REF.Article

Persistent photoconductivity as a tool for monitoring oxide cluster concentration in silicon wafersHADDAB, Y; MANIC, D; POPOVIC, R. S et al.Microelectronics and reliability. 1998, Vol 38, Num 4, pp 511-514, issn 0026-2714Article

Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductorsEDGAL, U. F; WILEY, J. D.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4997-5006, issn 0163-1829Article

GENERALIZED MODEL FOR THE CLUSTERING OF AS DOPANTS IN SIGUERRERO E; POETZL H; TIELERT R et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1826-1831; BIBL. 13 REF.Article

INTERSTITIAL HELIUM CLUSTERING IN MOLYBDENUM; EFFECT ON SURFACE BLISTERING.CASPERS LM; VAN VEEN A; VAN DAM H et al.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 50; NO 5; PP. 351-352; BIBL. 5 REF.Article

Clustering model in n-doped many-valley semiconductorsFABBRI, M; FERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5764-5773, issn 0163-1829Article

INFLUENCE OF RESISTIVE FORCES ON GRAIN BOUNDARY MOTION.BAUER CL.1974; CANAD. METALLURG. QUART.; CANADA; DA. 1974; VOL. 13; NO 1; PP. 303-308; ABS. FR.; BIBL. 22 REF.; (JT. GRAINS. EC. INT. ETE; MONTREAL; 1973)Conference Paper

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